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SiC MOSFETs

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SiC MOSFETs eliminate tail current during switching, resulting in faster operation, reduced switching loss and increased stabilisation. Lower ON resistance and a compact chip size result in reduced capacitance and gate charge. In addition, SiC exhibits superior material properties, such as minimal ON-resistance increases, and enables greater package miniaturization and energy savings than silicon (Si) devices, in which the ON resistance can more than double with increased temperature.

ROHM recently introduced its SCT Series of 3rd-generation trench-gate type SiC MOSFETs. Available in 6 variants(650V/1200V), these MOSFETs feature approx. 50% lower ON-resistance than 2nd-generation planar types, making them ideal for large server power supplies, UPS systems, solar power converters and electric vehicle charging stations requiring high efficiency.

The SCT3 series is offered in a 4-pin package (TO-247-4L) that maximises switching performance. This reduces switching loss by up to 35% over conventional 3-pin package types, contributing to lower power consumption in a variety of applications.

In addition, unlike conventional 3-pin package SiC MOSFETs in which the gate voltage drops due to the inductance component of the source terminal, causing the switching speed to be delayed, this new 4-pin package incorporates a source terminal for the gate driver separate from the conventional source terminal that minimizes this reduction in gate voltage, making it possible to maximise switching performance.

In manufacturing, the ROHM SCT2080KE MOSFET improves the efficiency of pulse generators by delivering a steep rise time that increases productivity.
Part Number Description Status Drain-source Voltage[V] Drain-source On-state Resistance (Typ.)[mΩ] Drain Current (A) Total Power Dissipation (W) Junction Temp. Max. °C Storage Temperature °C Common Standard
SCT3080ALHR

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SCT3080ALHR

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  		650V, 30A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive Recommended 650 80 30 134 175 -55 to 175 AEC-Q101 (Automotive Grade)
SCT3080AR

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SCT3080AR

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  		650V, 30A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET Recommended 650 80 30 134 175 -55 to 175 -
SCT3080AW7

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SCT3080AW7

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  		650V 29A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET New Recommended 650 80 30 134 175 -55 to 175 -
SCT3080KL

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SCT3080KL

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  		1200V, 31A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET Recommended 1200 80 31 165 175 -55 to 175 -
SCT3080KLHR

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  		1200V, 31A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive Recommended 1200 80 31 165 175 -55 to 175 AEC-Q101 (Automotive Grade)
SCT3080KR

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SCT3080KR

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  		1200V, 31A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET Recommended 1200 80 31 165 175 -55 to 175 -
SCT3080KW7

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  		1200V 30A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET New Recommended 1200 80 30 159 175 -55 to 175 -
SCT3105KL

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  		1200V, 24A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET Recommended 1200 105 24 134 175 -55 to 175 -
SCT3105KLHR

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  		1200V, 24A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive Recommended 1200 105 24 134 175 -55 to 175 AEC-Q101 (Automotive Grade)
SCT3105KR

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  		1200V, 24A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET Recommended 1200 105 24 134 175 -55 to 175 -
SCT3105KW7

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  		1200V 23A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET New Recommended 1200 105 23 125 175 -55 to 175 -
SCT3120AL

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SCT3120AL

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  		650V, 21A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET Recommended 650 120 21 103 175 -55 to 175 -
SCT3120AW7

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  		650V 21A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET New Recommended 650 120 21 100 175 -55 to 175 -
SCT3160KL

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SCT3160KL

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  		1200V, 17A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET Recommended 1200 160 17 103 175 -55 to 175 -
SCT3160KW7

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SCT3160KW7

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  		1200V 17A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET New Recommended 1200 160 17 100 175 -55 to 175 -

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