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Welcome to Willow Technologies / Rohm / SiC Power Modules

SiC Power Modules

alt SiC power modules are energy-saving, eco-friendly devices that offer several improvements over conventional products. They make effective use of power and resources and reduce costly power consumption while maintaining or increasing performance. For example, the switching loss in full SiC power modules integrating SiC MOSFETs and SBDs is significantly lower than in equivalently rated silicon-based IGBT modules. In addition, unlike conventional modules, these new SiC products support high-frequency operation above 100kHz. This improves efficiency in industrial equipment such as high-frequency power supplies for induction heating and hybrid-power storage systems. ROHM was the first in the industry to mass produce SiC power devices, which have since been adopted in a variety of fields, including industrial, automotive, railway, and consumer electronics. And due to their superior stability at high voltages, ROHM SiC power modules are used in Kurita Seisakusho high-power pulse plasma generators that deliver a reaction field up to 200kHz to better support customer requirements, a feat made possible only through SiC.
Part Number Description Status Drain-source Voltage[V] Drain Current (A) Total Power Dissipation (W) Junction Temp. Max.
°C		 Storage Temperature
°C		 Internal Circuit
BSM600D12P3G001

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BSM600D12P3G001

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  		1200V, 576A, Half bridge, Full SiC-Power Module with Trench MOSFET Recommended 1200 576 2450 175 -40 to 125 Half bridge
BSM600C12P3G201

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BSM600C12P3G201

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  		1200V, 576A, Chopper, Full SiC-Power Module with Trench MOSFET Recommended 1200 576 2460 175 -40 to 125 Chopper
BSM400D12P3G002

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BSM400D12P3G002

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  		1200V, 358A, Half bridge, Full SiC-Power Module with Trench MOSFET Recommended 1200 358 1570 175 -40 to 125 Half bridge
BSM400D12P2G003

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BSM400D12P2G003

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  		1200V, 397A, Half bridge, Silicon-carbide (SiC) Power Module Recommended 1200 397 2450 175 -40 to 125 Half bridge
BSM400C12P3G202

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BSM400C12P3G202

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  		1200V, 358A, Chopper, Full SiC-Power Module with Trench MOSFET Recommended 1200 358 1570 175 -40 to 125 Chopper
BSM300D12P3E005

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BSM300D12P3E005

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  		1200V, 300A, Half bridge, Full SiC-Power Module with Trench MOSFET Recommended 1200 300 1260 175 -40 to 125 -
BSM300D12P2E001

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  		1200V, 300A, Half bridge, Silicon-carbide (SiC) Power Module Recommended 1200 300 1875 175 -40 to 125 Half bridge
BSM300C12P3E301

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  		1200V, 300A, Buck Chopper, Full SiC-Power Module with Trench MOSFET Recommended 1200 300 1360 175 -40 to 125 Chopper
BSM300C12P3E201

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BSM300C12P3E201

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  		1200V, 300A, Boost Chopper, Full SiC-Power Module with Trench MOSFET Recommended 1200 300 1360 175 -40 to 125 Chopper
BSM250D17P2E004

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BSM250D17P2E004

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  		1700V, 250A, Half bridge, Silicon-carbide (SiC) Power Module Recommended 1700 250 1800 175 -40 to 125 Half bridge
BSM180D12P3C007

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BSM180D12P3C007

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  		1200V, 180A, Half bridge, Full SiC-Power Module with Trench MOSFET Recommended 1200 180 880 175 -40 to 125 Half bridge
BSM180D12P2E002

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BSM180D12P2E002

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  		1200V, 204A, Half bridge, Silicon-carbide (SiC) Power Module Recommended 1200 204 1360 175 -40 to 125 Half bridge
BSM180D12P2C101

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  		BSM180D12P2C101 1200V, 204A, Half bridge, Silicon-carbide (SiC) Power Module Active 1200 204 1360 175 -40 to 125 Half bridge
BSM180C12P3C202

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  		1200V, 180A, Chopper, Full SiC-Power Module with Trench MOSFET Recommended 1200 180 880 175 -40 to 125 Chopper
BSM180C12P2E202

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BSM180C12P2E202

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  		1200V, 204A, Chopper, Silicon-carbide (SiC) Power Module Recommended 1200 204 1360 175 -40 to 125 Chopper
BSM120D12P2C005

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BSM120D12P2C005

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  		1200V, 134A, Half bridge, Silicon-carbide (SiC) Power Module Recommended 1200 134 935 175 -40 to 125 Half bridge
BSM120C12P2C201

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  		1200V, 134A, Chopper, Silicon-carbide (SiC) Power Module Recommended 1200 134 935 175 -40 to 125 Chopper
BSM080D12P2C008

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BSM080D12P2C008

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  		1200V, 80A, Half bridge, Silicon-carbide (SiC) Power Module Recommended 1200 80 600 175 -40 to 125 Half bridge

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