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White Papers for SiC MOSFETs

Document Title Brief Description
Design & Test System Evaluation for SiC Power MOSFETS and Motor Control Units In recent years, the silicon carbide power semiconductor has become a hot topic in energy conversion applications. Thanks to its material properties, it has higher maximum junction temperature, lower loss and smaller thermal resistance than silicon-based semiconductor devices. This is the main reason why many people believe that SiC inverter system will have higher power density, smaller volume, higher allowable operating temperature and lower energy loss.
Solving challenges of driving SiC MOSFETs with new packaging Silicon carbide (SiC) MOSFETs offer tremendous new characteristics and capabilities, but they also present new challenges. ROHM semiconductor devices allow engineers to take full advantage of SiC MOSFETs, while also overcoming the challenges of driving them.

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