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Application Notes for SiC MOSFETs

Document Title Brief Description
Calculating power loss of SiC MOSFET from measured waveroms This application note describes how to calculate the power loss of a SiC MOSFET from measured switching waveforms in aswitching circuit with a SiC MOSFET.
Calculation of Power Dissipation in Switching Circuit This application note describes how to calculate the power dissipation that occurs in a SiC MOSFET in a switching circuit with the SiC MOSFET during switching operations.
Gate-source voltage behaviour in a bridge configuration Power switching devices such as MOSFETs and IGBTs are used for various kinds of power supply applications, power supply line switching components, and other power applications. In addition, the circuit topologies used are diverse, parallel and series connections are widely used, not to mention single device use. Especially in bridge circuit configuration, in which the devices are connected in series, it is common to turn on and turn off each device alternately. Due to the current flowing and the voltage change in each device, the devices greatly affect one another. In this application note, we focus on Gate-Source voltage in MOSFET bridge configuration based on one of the simplest power circuits, a synchronous rectification boost converter to understand the switching operation in detail.
Gate-source Voltage surge suppression methods Power semiconductors such as MOSFETs and IGBTs are used as switching components for various power supply applications and power lines. SiC MOSFETs, which have been increasingly adopted in recent years, operate at such a high-speed that changes the voltage and current during switching cannot be ignored due to the effects of the package inductance of the device itself and the wiring parasitic inductance of the surrounding circuits. In particular, the gate-source voltage may cause an unexpected positive or negative surge when the voltage or current of the device itself varies, thus, various countermeasures have been investigated. Therefore, this application note aims to present the best countermeasures while clarifying the causes of the surge that occurs between gate and source of the MOSFET.
How to use Thermal Models Among SPICE models, there are models for performing simulations in relation to heat, which are referred to as thermal models. Simulations using the thermal models are performed to make a rough estimate during the initial stage of thermal design. This application note explains how to use the thermal models.
Impedance Characteristics of Bypass Capacitor This application note focuses on the impedance characteristics of capacitors, and explains cautions for selecting bypass capacitors.
Importance of Probe Calibration When Measuring Power: Deskew Even when devices used for measurement are calibrated regularly, they will give incorrect results if calibration is not performed for the measurement environment. This application note explains the importance of probe calibration in power measurement environments.
Measurement Method and Usage of Thermal Resistance RthJC This application note describes how to measure and use the junction-to-case thermal resistance of a discrete semiconductor device.
Method for Monitoring Switching Waveform This application note explains how to correctly monitor the switching waveforms of the power device element such as switching power supply or a motor drive circuit.
Notes for Temperature Measurement Using Forward Voltage of PN Junction This application note explains cautions regarding the temperature measurement Using Forward Voltage of PN Junction. The content of this application note is generally applicable, irrespective of the types of semiconductor devices.
Notes for Temperature Measurement Using Thermocouples This application note explains cautions regarding the temperature measurement. The content of this application note is generally applicable, irrespective of the types of semiconductor devices.
Precautions during gate-source voltage measurement for SiC MOSFET Power devices such as MOSFETs and IGBTs are used as switching devices in various power supply applications. Due to the steep voltage and current slopes present during the switching transients of a SiC MOSFET device, the measurement of the gate-source voltage should be performed carefully. As described in “Gate-source voltage behaviour in a bridge configuration” [1] application note, it is necessary to determine with accuracy the voltage peaks between gate and source, so that the limits specified in the data sheet are not violated. This application note will explain the precautions that need to be taken during the gate - source voltage measurement.
Precautions When Measuring the Rear of the Package with a Thermocouple This application note describes precautions when measuring the temperature on the rear of a package using a thermocouple to find the junction temperature of a semiconductor chip during actual operation.
SiC Power Devices and Modules Learn more about SiC Power Devices and Modules
Snubber Circuit Designts Method - Sic MOSFET SiC MOSFET is getting more popular in applications where fast and efficient switching is required, such as power supply applications. On the other hand, the fast switching capability causes high dv/dt and di/dt, which couple with stray inductance of package and surrounding circuit, resulting in large surge voltage and/or current between drain and source terminals of the MOSFET. The surge voltage and current have to be controlled to not exceed the maximum rated voltage/current of the device. This application note illustrates a way to design snubber circuit, which is one of the methods to suppress surges voltages and currents.
Two-Resistor Model for Thermal Simulation This application note explains the two-resistor model, which is the simplest model among thermal models used in thermal simulations. The thermal simulations mentioned here cover three-dimensional model thermal conduction and thermal fluid analysis tools.
What is a Thermal Model - SiC Power Device? "Among SPICE models, there are models for performing simulations in relation to heat, which are referred to as thermal models. Simulations using the thermal models are performed to make a rough estimate during the initial stage of thermal design. This application note explains the thermal models."

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